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Scintillating properties of Bi-doped Y.sub.3./sub.Ga.sub.5./sub.O.sub.12./sub.
- 1.0001077 - FZÚ 2006 RIV KR eng J - Journal Article
Novoselov, A. - Yoshikawa, A. - Nikl, Martin - Fukuda, T.
Scintillating properties of Bi-doped Y3Ga5O12.
[Scintilační vlastnosti Y3Ga5O12 dopovaného Bi.]
Journal of Korean Crystal Growth and Crystal Technology. Roč. 14, č. 6 (2004), s. 233-235. ISSN 1225-1429. E-ISSN 2234-5078
R&D Projects: GA MŠMT(CZ) 1P04ME716
Institutional research plan: CEZ:AV0Z1010914
Keywords : Y3Ga5O12 * Bi-doped * luminescence * scintillators
Subject RIV: BM - Solid Matter Physics ; Magnetism
Shaped single crystals of Bi:Y3Ga5O12 were grown by the micro-pulling-down method.Optical absorption spectra show an absorption band at 288 nm ascribed to the lowest energy 6s2->6s6p transition of Bi3+,while luminescence spectra demonstrate the band at 314 nm ascribed to the reverse radiative transition of excited Bi3+ centres
Tvarované Bi:Y3Ga5O12 monokrystaly byly pěstovány metodou "micropulling-down".Přechod 6s2->6s6p na iontu Bi3+ je zodpovědný za absorpční pás u 288 nm a luminescnční pás u 314 nm
Permanent Link: http://hdl.handle.net/11104/0018260
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