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Review/Citation:  VANĚK, Tomáš, HÁJEK, František, DOMINEC, Filip, HUBÁČEK, Tomáš, KULDOVÁ, Karla, PANGRÁC, Jiří, KOŠUTOVÁ, Tereza, KEJZLAR, P., BÁBOR, P., LACHOWSKI, A., HOSPODKOVÁ, Alice. Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms. Journal of Crystal Growth. 2021, 565(July), 126151. ISSN 0022-0248. E-ISSN 1873-5002
Requested document:  0542805.pdf - Author’s postprint
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