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0463746 - FZÚ 2017 RIV DE eng A - Abstract
Hospodková, Alice - Oswald, Jiří - Pangrác, Jiří - Zíková, Markéta - Vyskočil, Jan - Kuldová, Karla - Melichar, Karel - Hubáček, Tomáš - Walachová, J. - Vaniš, J. - Křápek, V. - Humlíček, J. - Nikl, Martin - Pacherová, Oliva - Brůža, P. - Pánek, D. - Foltynski, B. - Oeztuerk, M. - Heuken, M. - Hulicius, Eduard
Nanostructures grown by MOVPE InAs/InGaAs/Ga(Sb)As quantum dot and GaN/InGaN quantum well structures.
GCCCG-1/DKT2016. Dresden: TU Dresden, 2016. s. 38.
[German Czechoslovak Conference on Crystal Growth (GCCCG-1) /1./. 16.03.2016-18.03.2016, Dresden]
R&D Projects: GA ČR GA13-15286S; GA ČR(CZ) GP14-21285P; GA MŠMT(CZ) LM2011026
Institutional support: RVO:68378271
Keywords : MOVPE * InAs quantum dot * GaAsSb SRL * GaInN quantum well * GaN * GaAs
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0262837