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0580308 - ÚMCH 2024 RIV GB eng J - Journal Article
Panthi, Yadu Ram - Pfleger, Jiří - Výprachtický, Drahomír - Pandey, Ambika - Thottappali, Muhammed Arshad - Šeděnková, Ivana - Konefal, Magdalena - Foulger, S. H.
Rewritable resistive memory effect in poly[N-(3-(9H-carbazol-9-yl)propyl)-methacrylamide] memristor.
Journal of Materials Chemistry C. Roč. 11, č. 48 (2023), s. 17093-17105. ISSN 2050-7526. E-ISSN 2050-7534
R&D Projects: GA MŠMT(CZ) LTAUSA19066
Institutional support: RVO:61389013
Keywords : electronic memory * resistive memory * organic electronics
OECD category: Polymer science
Impact factor: 6.4, year: 2022
Method of publishing: Open access
https://pubs.rsc.org/en/content/articlelanding/2023/TC/D3TC03394E
Permanent Link: https://hdl.handle.net/11104/0349271