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0579305 - FZÚ 2024 RIV UA eng J - Journal Article
Savchenko, Dariia - Yatsyk, D.M. - Genkin, O.M. - Nosachov, Yu.F. - Drozdenko, O.V. - Moiseenko, V.I. - Kalabukhova, E.N.
Electrical properties of highly nitrogen-doped 6H-SiC single crystals: Microwave cavity perturbation study.
Semiconductor Physics Quantum Electronics & Optoelectronics. Roč. 26, č. 1 (2023), s. 30-35. ISSN 1560-8034. E-ISSN 1605-6582
R&D Projects: GA MŠMT(CZ) EF16_019/0000760
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : conductivity * SiC * cavity perturbation method * activation energy
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 0.9, year: 2022
Method of publishing: Open access
Permanent Link: https://hdl.handle.net/11104/0348145