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0578172 - ÚFM 2024 RIV US eng J - Journal Article
Pongrácz, Jakub - Vacek, P. - Gröger, Roman
Recombination activity of threading dislocations in MOVPE-grown AlN/Si {111} films etched by phosphoric acid.
Journal of Applied Physics. Roč. 134, č. 19 (2023), č. článku 195704. ISSN 0021-8979. E-ISSN 1089-7550
R&D Projects: GA TA ČR(CZ) FW01010183; GA MŠMT(CZ) EF18_053/0016933
Research Infrastructure: CzechNanoLab - 90110
Institutional support: RVO:68081723
Keywords : Crystallographic defects * Crystal lattices * Crystal structure * Epitaxy * Etching * Atomic force microscopy
OECD category: Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)
Impact factor: 3.2, year: 2022
Method of publishing: Limited access
https://pubs.aip.org/aip/jap/article-abstract/134/19/195704/2921456/Recombination-activity-of-threading-dislocations?redirectedFrom=fulltext
Permanent Link: https://hdl.handle.net/11104/0347224