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0574605 - FZÚ 2024 RIV US eng J - Journal Article
Hájek, František - Jarý, Vítězslav - Hubáček, Tomáš - Dominec, Filip - Hospodková, Alice - Kuldová, Karla - Oswald, Jiří - Pangrác, Jiří - Vaněk, Tomáš - Buryi, Maksym - Ledoux, G. - Dujardin, C.
Donor-acceptor pairs recombination as the origin of the emission shift in InGaN/GaN scintillator heterostructures doped with Zn.
ECS Journal of Solid State Science and Technology. Roč. 12, č. 6 (2023), č. článku 066004. ISSN 2162-8769. E-ISSN 2162-8777
R&D Projects: GA ČR(CZ) GJ20-05497Y
Institutional support: RVO:68378271
Keywords : nitrides * scintillator * defects * luminescence
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 2.2, year: 2022
Method of publishing: Open access
Permanent Link: https://hdl.handle.net/11104/0346913