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0572001 - FZÚ 2024 RIV US eng J - Journal Article
Hospodková, Alice - Hájek, František - Hubáček, Tomáš - Gedeonová, Zuzana - Hubík, Pavel - Hývl, Matěj - Pangrác, Jiří - Dominec, Filip - Košutová, Tereza
Electron transport properties in high electron mobility transistor structures improved by V-Pit formation on the AlGaN/GaN interface.
ACS Applied Materials and Interfaces. Roč. 15, č. 15 (2023), s. 19646-19652. ISSN 1944-8244. E-ISSN 1944-8252
R&D Projects: GA MŠMT(CZ) LTAIN19163; GA ČR(CZ) GF22-28001K; GA MŠMT LM2023051
Institutional support: RVO:68378271
Keywords : HEMT * GaN * AlGaN * metal-organic vapor phase epitaxy * dislocations * electron mobility
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 9.5, year: 2022
Method of publishing: Open access
Permanent Link: https://hdl.handle.net/11104/0342845