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0570390 - FZÚ 2024 RIV NL eng J - Journal Article
Hubáček, Tomáš - Kuldová, Karla - Gedeonová, Zuzana - Hájek, František - Košutová, Tereza - Banerjee, Swarnendu - Hubík, Pavel - Pangrác, Jiří - Vaněk, Tomáš - Hospodková, Alice
Impact of Ge doping on MOVPE grown InGaN layers.
Journal of Crystal Growth. Roč. 604, Feb (2023), č. článku 127043. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT LM2018110; GA MŠMT(CZ) LTAIN19163; GA ČR(CZ) GJ20-05497Y
Institutional support: RVO:68378271
Keywords : germanium * MOVPE * InGaN * nitrides * photoluminescence * doping
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.8, year: 2022
Method of publishing: Limited access
https://doi.org/10.1016/j.jcrysgro.2022.127043
Permanent Link: https://hdl.handle.net/11104/0341707