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0567278 - FZÚ 2023 RIV GB eng C - Conference Paper (international conference)
Buryi, Maksym - Hubáček, Tomáš - Hájek, František - Jarý, Vítězslav - Babin, Vladimir - Kuldová, Karla - Vaněk, Tomáš
Luminescence and scintillation properties of the Si doped InGaN/GaN multiple quantum wells.
Journal of Physics: Conference Series. Vol. 2413. Bristol: IOP Publishing, 2022, č. článku 012001. ISSN 1742-6588.
[DMSRE seminar: Development of Materials Science in Research and Education (DMSRE) /31./. Nová Lesná (SK), 05.09.2022-09.09.2022]
R&D Projects: GA ČR(CZ) GJ20-05497Y
Institutional support: RVO:68378271
Keywords : InGaN/GaN multiple quantum wells * Si doping * luminescence
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
https://iopscience.iop.org/article/10.1088/1742-6596/2413/1/012001
Permanent Link: https://hdl.handle.net/11104/0338546