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0562801 - FZÚ 2023 RIV CH eng J - Journal Article
Hospodková, Alice - Čížek, J. - Hájek, František - Hubáček, Tomáš - Pangrác, Jiří - Dominec, Filip - Kuldová, Karla - Batysta, Jan - Liedke, M.O. - Hirschmann, E. - Butterling, M. - Wagner, A.
Relation between Ga vacancies, photoluminescence, and growth conditions of MOVPE-prepared GaN layers.
Materials. Roč. 15, č. 19 (2022), č. článku 6916. E-ISSN 1996-1944
R&D Projects: GA MŠMT LM2018110; GA ČR(CZ) GF22-28001K; GA MŠMT(CZ) EF16_019/0000760
Grant - others:AV ČR(CZ) PAN-20-19; OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Program: Bilaterální spolupráce
Institutional support: RVO:68378271
Keywords : GaN * defects * positron annihilation spectroscopy * photoluminescence * MOVPE
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.4, year: 2022
Method of publishing: Open access
Permanent Link: https://hdl.handle.net/11104/0334994