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0557036 - ÚJF 2023 RIV US eng J - Journal Article
Kjeldby, S. B. - Azarov, A. - Nguyen, P. D. - Venkatachalapathy, V. - Mikšová, Romana - Macková, Anna - Kuznetsov, A. - Prytz, O. - Vines, L.
Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide.
Journal of Applied Physics. Roč. 131, č. 12 (2022), č. článku 125701. ISSN 0021-8979. E-ISSN 1089-7550
R&D Projects: GA MŠMT EF16_013/0001812
Research Infrastructure: CANAM II - 90056
Institutional support: RVO:61389005
Keywords : Electron energy loss spectroscopy * High resolution transmission electron microscopy * Rutherford backscattering spectroscopy
OECD category: Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)
Impact factor: 3.2, year: 2022
Method of publishing: Limited access
https://doi.org/10.1063/5.0083858
Permanent Link: http://hdl.handle.net/11104/0331142