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0556467 - FZÚ 2023 RIV GB eng J - Journal Article
Kashir, Alireza - Hwang, H.
A CMOS-compatible morphotropic phase boundary.
Nanotechnology. Roč. 32, č. 44 (2021), č. článku 445706. ISSN 0957-4484. E-ISSN 1361-6528
Institutional support: RVO:68378271
Keywords : high-k dielectrics * HfO₂ * ZrO₂ * CMOS * equivalent oxide thickness
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.953, year: 2021
Method of publishing: Limited access
https://doi.org/10.1088/1361-6528/ac1716
Permanent Link: http://hdl.handle.net/11104/0330677