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0556013 - FZÚ 2023 RIV CH eng J - Journal Article
Taylor, Andrew - Baluchová, Simona - Fekete, Ladislav - Klimša, Ladislav - Kopeček, Jaromír - Šimek, Daniel - Vondráček, Martin - Míka, L. - Fischer, J. - Schwarzová-Pecková, K. - Mortet, Vincent
Growth and comparison of high-quality MW PECVD grown B doped diamond layers on {118}, {115} and {113} single crystal diamond substrates.
Diamond and Related Materials. Roč. 123, Mar (2022), č. článku 108815. ISSN 0925-9635. E-ISSN 1879-0062
R&D Projects: GA ČR(CZ) GA20-03187S; GA MŠMT(CZ) EF16_019/0000760
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Research Infrastructure: CzechNanoLab - 90110
Institutional support: RVO:68378271
Keywords : single crystal diamond * boron-doping level * crystallographic orientation * electron transfer kinetics * Surface/chemical analysis
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 4.1, year: 2022
Method of publishing: Limited access
https://doi.org/10.1016/j.diamond.2021.108815
Permanent Link: http://hdl.handle.net/11104/0330378