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0543533 - FZÚ 2022 RIV GB eng J - Journal Article
Hájek, František - Hospodková, Alice - Hubík, Pavel - Gedeonová, Zuzana - Hubáček, Tomáš - Pangrác, Jiří - Kuldová, Karla
Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design.
Semiconductor Science and Technology. Roč. 36, č. 7 (2021), č. článku 075016. ISSN 0268-1242. E-ISSN 1361-6641
R&D Projects: GA MŠMT LM2018110; GA MŠMT(CZ) LTAIN19163; GA MŠMT(CZ) EF16_019/0000760
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : HEMT * GaN * metalorganic vapor phase epitaxy
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 2.048, year: 2021
Method of publishing: Open access with time embargo
Permanent Link: http://hdl.handle.net/11104/0320728