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0541744 - FZÚ 2022 RIV CH eng J - Journal Article
Mortet, Vincent - Taylor, Andrew - Lambert, Nicolas - Gedeonová, Zuzana - Fekete, Ladislav - Lorinčík, J. - Klimša, Ladislav - Kopeček, Jaromír - Hubík, Pavel - Šobáň, Zbyněk - Laposa, A. - Davydova, Marina - Voves, J. - Pošta, A. - Povolný, V. - Hazdra, P.
Properties of boron-doped (113) oriented homoepitaxial diamond layers.
Diamond and Related Materials. Roč. 111, Jan (2021), č. článku 108223. ISSN 0925-9635. E-ISSN 1879-0062
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA MŠMT LM2018110; GA ČR(CZ) GA20-11140S; GA ČR GA17-05259S
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : boron-doped diamond * electrical properties * (113) oriented epitaxial diamond
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.806, year: 2021
Method of publishing: Limited access
https://doi.org/10.1016/j.diamond.2020.108223
Permanent Link: http://hdl.handle.net/11104/0319277