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0539691 - FZÚ 2021 RIV US eng J - Journal Article
Mallada Faes, Benjamin Jose - Edalatmanesh, S. - Lazar, P. - López, Roso Redondo Jesús R. - Gallardo Caparrós, Aurelio Jesús - Zbořil, Radek - Jelínek, Pavel - Švec, Martin - De La Torre Cerdeño, Bruno
Atomic-scale charge distribution mapping of single substitutional p- and n-type dopants in graphene.
ACS Sustainable Chemistry & Engineering. Roč. 8, č. 8 (2020), s. 3437-3444. ISSN 2168-0485. E-ISSN 2168-0485
R&D Projects: GA ČR(CZ) GA18-09914S; GA ČR(CZ) GX19-27454X; GA ČR GJ17-24210Y
Grant - others:AV ČR(CZ) AP1601
Program: Akademická prémie - Praemium Academiae
Institutional support: RVO:68378271 ; RVO:61388963
Keywords : electronic-structure * SPM * graphene * doping * DFT
OECD category: Condensed matter physics (including formerly solid state physics, supercond.); Physical chemistry (UOCHB-X)
Impact factor: 8.198, year: 2020
Method of publishing: Limited access
https://doi.org/10.1021/acssuschemeng.9b07623
Permanent Link: http://hdl.handle.net/11104/0317401