Basket

0539176 - FZÚ 2021 RIV US eng J - Journal Article
Tisbi, E. - Placidi, E. - Magri, R. - Prosposito, P. - Francini, R. - Zaganelli, A. - Cecchi, S. - Zallo, E. - Calarco, R. - Luna, E. - Honolka, Jan - Vondráček, Martin - Colonna, S. - Arciprete, F.
Increasing optical efficiency in the telecommunication bands of strain-engineered Ga(As, Bi) alloys.
Physical Review Applied. Roč. 14, č. 1 (2020), s. 1-14, č. článku 014028. ISSN 2331-7019. E-ISSN 2331-7019
R&D Projects: GA MŠMT EF16_013/0001406
Grant - others:OP VVV - SAFMAT(XE) CZ.02.1.01/0.0/0.0/16_013/0001406
Institutional support: RVO:68378271
Keywords : alloys * III-V semiconductors * single crystal materials * crystal growth * luminescence * optoelectronics
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 4.985, year: 2020
Method of publishing: Limited access
https://doi.org/10.1103/PhysRevApplied.14.014028
Permanent Link: http://hdl.handle.net/11104/0316877