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0536309 - FZÚ 2021 RIV US eng J - Journal Article
Jarý, Vítězslav - Hospodková, Alice - Hubáček, Tomáš - Hájek, František - Blažek, K. - Nikl, Martin
Optical properties of InGaN/GaN multiple quantum well structures grown on GaN and sapphire substrates.
IEEE Transactions on Nuclear Science. Roč. 67, č. 6 (2020), s. 974-977. ISSN 0018-9499. E-ISSN 1558-1578
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA TA ČR TH02010580
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : gallium nitride * substrates * quantum well devices * photoluminescence * photonic band gap * fluctuations * nanotechnology * scintillation detectors
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.679, year: 2020
Method of publishing: Limited access
https://doi.org/10.1109/TNS.2020.2985666
Permanent Link: http://hdl.handle.net/11104/0314097