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0533199 - FZÚ 2021 RIV NL eng J - Journal Article
Hubáček, Tomáš - Hospodková, Alice - Kuldová, Karla - Slavická Zíková, Markéta - Pangrác, Jiří - Čížek, J. - Liedke, M.O. - Butterilng, M. - Wagner, A. - Hubík, Pavel - Hulicius, Eduard
Improvement of luminescence properties of n-GaN using TEGa precursor.
Journal of Crystal Growth. Roč. 531, Feb (2020), s. 1-7, č. článku 125383. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA TA ČR TH02010014; GA MŠMT(CZ) LO1603
Institutional support: RVO:68378271
Keywords : MOVPE * TEGa precursor * n-GaN * yellow band * V.sub.Ga.-sub. defect
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.797, year: 2020
Method of publishing: Limited access
https://doi.org/10.1016/j.jcrysgro.2019.125383
Permanent Link: http://hdl.handle.net/11104/0311664