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    0523535 - ÚFE 2020 RIV US eng C - Conference Paper (international conference)
    Tiagulskyi, Stanislav - Yatskiv, Roman - Faitová, Hana - Vaniš, Jan - Grym, Jan
    Homogeneous Resistive Switching in Individual ZnO Nanorod p-n Junctions.
    International Semiconductor Conference (CAS 2019). New York: IEEE, 2019 - (Brezeanu, G.), s. 289-292. ISBN 978-1-7281-1888-8. ISSN 1545-827X.
    [42nd International Semiconductor Conference (CAS). Sinaia (RO), 09.10.2019-11.10.2019]
    R&D Projects: GA ČR(CZ) GA17-00546S; GA ČR(CZ) GA17-00355S
    Institutional support: RVO:67985882
    Keywords : Nanoprobe I-V * Nanoscale heterojunctions * FIB
    OECD category: Electrical and electronic engineering
    Permanent Link: http://hdl.handle.net/11104/0307889
    FileDownloadSizeCommentaryVersionAccess
    UFE 0523535.pdf2230.7 KBAuthor´s preprintrequire
     
     

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