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    0520842 - FZÚ 2020 RIV LT eng J - Journal Article
    Hospodková, Alice - Slavická Zíková, Markéta - Hubáček, Tomáš - Pangrác, Jiří - Kuldová, Karla - Hájek, František - Dominec, Filip - Vetushka, Aliaksi - Hasenöhrl, S.
    Improvement of GaN crystalline quality by SiNx layer grown by MOVPE.
    Lithuanian Journal of Physics. Roč. 59, č. 4 (2019), s. 179-186. ISSN 1648-8504. E-ISSN 1648-8504
    R&D Projects: GA MŠMT(CZ) LO1603; GA ČR(CZ) GA16-11769S; GA TA ČR TH02010014
    Institutional support: RVO:68378271
    Keywords : dislocations * MOVPE * GaN * SiNx * photoluminescence
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 0.966, year: 2019
    Method of publishing: Open access
    Permanent Link: http://hdl.handle.net/11104/0305500
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    0520842.pdf03 MBOA časopisPublisher’s postprintopen-access
     
     

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