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  1. 1.
    0511336 - FZÚ 2020 RIV DE eng J - Journal Article
    Remeš, Zdeněk - Stuchlík, Jiří - Stuchlíková, The-Ha - Dragounová, K. - Ashcheulov, Petr - Taylor, Andrew - Mortet, Vincent - Poruba, Aleš
    Optoelectronic properties of hydrogenated amorphous substoichiometric silicon carbide with low carbon content deposited at high temperature on semi-transparent boron-doped diamond.
    Physica Status Solidi A. Roč. 216, č. 21 (2019), s. 1-6, č. článku 1900241. ISSN 1862-6300. E-ISSN 1862-6319
    R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR GC19-02858J
    Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
    Institutional support: RVO:68378271
    Keywords : silicon carbide * boron-doped diamond * diode * photothermal deflection spectroscopy * Raman spectroscopy * infrared spectroscopy * current-voltage characteristics
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 1.759, year: 2019
    Method of publishing: Limited access
    https://doi.org/10.1002/pssa.201900241
    Permanent Link: http://hdl.handle.net/11104/0301632
     
     

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