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0509851 - ÚFM 2020 RIV NL eng J - Journal Article
Lee, L.Y. - Frentrup, M. - Vacek, Petr - Massabuau, Fabien C. P. - Kappers, Menno J. - Wallis, David J. - Oliver, Rachel A.
Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates.
Journal of Crystal Growth. Roč. 524, OCT (2019), č. článku 125167. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT(CZ) EF16_027/0008056
Institutional support: RVO:68081723
Keywords : Atomic force microscopy * Nucleation * X-ray diffraction * Metalorganic vapor phase epitaxy * Nitrides * Semiconducting gallium compounds
OECD category: Electrical and electronic engineering
Impact factor: 1.632, year: 2019
Method of publishing: Limited access
https://www.sciencedirect.com/science/article/pii/S0022024819303823?via%3Dihub
Permanent Link: http://hdl.handle.net/11104/0300844