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0508842 - ÚJF 2020 RIV US eng J - Journal Article
Mikšová, Romana - Horák, Pavel - Holý, V. - Macková, Anna
Study of thermal recrystallisation in Si implanted by 0.4-MeV heavy ions.
Surface and Interface Analysis. Roč. 51, č. 11 (2019), s. 1113-1120. ISSN 0142-2421. E-ISSN 1096-9918
R&D Projects: GA ČR GA18-03346S; GA MŠMT EF16_013/0001812; GA MŠMT LM2015056
Institutional support: RVO:61389005
Keywords : ion implantation of Si * ion channelling in a crystal material * heavy ions implantation * structural modification of an ion-implanted silicon crystal
OECD category: Nuclear physics
Impact factor: 1.665, year: 2019
Method of publishing: Limited access
https://doi.org/10.1002/sia.6698
Permanent Link: http://hdl.handle.net/11104/0300721