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0504789 - ÚJF 2020 RIV CH eng J - Journal Article
Macková, Anna - Malinský, Petr - Jagerová, Adéla - Mikšová, Romana - Sofer, Z. - Klímová, K. - Mikulics, M. - Bottger, R. - Akhmadaliev, S. - Oswald, Jiří
Damage accumulation and implanted Gd and Au position in a- and c-plane GaN.
Thin Solid Films. Roč. 680, č. 6 (2019), s. 102-113. ISSN 0040-6090. E-ISSN 1879-2731
R&D Projects: GA MŠMT EF16_013/0001812; GA MŠMT LM2015056; GA ČR GA18-03346S
Institutional support: RVO:68378271 ; RVO:61389005
Keywords : Implanted (0001) and (11-20) GaN * Damage accumulation asymmetry in GaN * Ion implantation in semiconductors * RBS channelling * Damage-depth profiling
OECD category: Nuclear physics; Condensed matter physics (including formerly solid state physics, supercond.) (FZU-D)
Impact factor: 2.030, year: 2019
Method of publishing: Limited access
https://doi.org/10.1016/j.tsf.2019.04.035
Permanent Link: http://hdl.handle.net/11104/0296342