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  1. 1.
    0501495 - FZÚ 2019 JP eng A - Abstract
    Hospodková, Alice - Dominec, Filip - Hubáček, Tomáš - Zíková, Markéta - Pangrác, Jiří - Oswald, Jiří - Kuldová, Karla - Vetushka, Aliaksi - Hulicius, Eduard
    Suppressed contamination of InGaN/GaN MQW region by growing the buffer layer at lower temperature.
    ICMOVPE XIX - Technical Digest. Nara: Japanese Association for Crystal Growth, 2018 - (Miyake, H.). s. 147-147
    [19th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XIX. 03.06.2018-08.06.2018, Nara]
    R&D Projects: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
    EU Projects: European Commission(XE) 690599 - ASCIMAT
    Institutional support: RVO:68378271
    Keywords : GaN buffer layer * scintillators * low dimensional structures * V-pits * metalorganic vapor phase epitaxy * InGaN/GaN QWs
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Permanent Link: http://hdl.handle.net/11104/0293517
     
     

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