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0497102 - ÚJF 2019 RIV CH eng J - Journal Article
Macková, Anna - Malinský, Petr - Jagerová, Adéla - Sofer, Z. - Klímová, K. - Sedmidubský, D. - Mikulics, M. - Bottger, R. - Akhmadaliev, S.
Damage accumulation and structural modification in c-plane and a-plane GaN implanted with 400 keV Kr and Gd ions.
Surface and Coatings Technology. Roč. 355, SI (2018), s. 22-28. ISSN 0257-8972.
[International Conference on Surface Modification of Materials by Ion Beams (SMMIB). Lisbon, 09.07.2017-14.07.2017]
R&D Projects: GA MŠMT EF16_013/0001812; GA MŠMT LM2015056; GA ČR GA15-01602S
Institutional support: RVO:61389005
Keywords : GaN damage accumulation * structure modification in c-plane and a-plane * GaN * RBS channeling studies of implanted GaN
OECD category: Nuclear physics
Impact factor: 3.192, year: 2018
Permanent Link: http://hdl.handle.net/11104/0289694