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  1. 1.
    0496731 - ÚJF 2019 RIV US eng J - Journal Article
    Macková, Anna - Malinský, Petr - Jagerová, Adéla - Sofer, Z. - Sedmidubský, D. - Klímová, K. - Bottger, R. - Akhmadaliev, S.
    Damage accumulation and structural modification in a- and c-plane GaN implanted with 400-keV and 5-MeV Au+ ions.
    Surface and Interface Analysis. Roč. 50, č. 11 (2018), s. 1099-1105. ISSN 0142-2421. E-ISSN 1096-9918.
    [17th European Conference on Applications of Surface and Interface Analysis (ECASIA 2017). Monpellier, 24.09.2017-29.09.2017]
    R&D Projects: GA MŠk EF16_013/0001812; GA MŠk LM2015056; GA ČR GA15-01602S
    Institutional support: RVO:61389005
    Keywords : damage accumulation in GaN * RBS channeling in ion-modified GaN * structure modification in c-plane and a-plane GaN
    Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders
    OBOR OECD: Nuclear physics
    Impact factor: 1.319, year: 2018
    Permanent Link: http://hdl.handle.net/11104/0289383