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0496731 - ÚJF 2019 RIV US eng J - Journal Article
Macková, Anna - Malinský, Petr - Jagerová, Adéla - Sofer, Z. - Sedmidubský, D. - Klímová, K. - Bottger, R. - Akhmadaliev, S.
Damage accumulation and structural modification in a- and c-plane GaN implanted with 400-keV and 5-MeV Au+ ions.
Surface and Interface Analysis. Roč. 50, č. 11 (2018), s. 1099-1105. ISSN 0142-2421. E-ISSN 1096-9918.
[17th European Conference on Applications of Surface and Interface Analysis (ECASIA 2017). Monpellier, 24.09.2017-29.09.2017]
R&D Projects: GA MŠMT EF16_013/0001812; GA MŠMT LM2015056; GA ČR GA15-01602S
Institutional support: RVO:61389005
Keywords : damage accumulation in GaN * RBS channeling in ion-modified GaN * structure modification in c-plane and a-plane GaN
OECD category: Nuclear physics
Impact factor: 1.319, year: 2018
Permanent Link: http://hdl.handle.net/11104/0289383