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0496205 - FZÚ 2019 RIV PL eng A - Abstract
Hospodková, Alice - Hubáček, Tomáš - Zíková, Markéta - Dominec, Filip - Oswald, Jiří - Kuldová, Karla - Hájek, František - Vaněk, Tomáš - Jarý, Vítězslav
Design of InGaN/GaN MQW structure for scintillator applications.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 256-256.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
R&D Projects: GA ČR GA16-11769S
Institutional support: RVO:68378271
Keywords : InGaN/GaN * MQW structure * scintillator
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0289031