0481264 - FZÚ 2018 RIV US eng C - Conference Paper (international conference)
Derrien, Thibault - Bulgakova, Nadezhda M.Modeling of silicon in femto second laser-induced modification regimes: accounting for ambipolar diffusion.
Nonlinear Optics and Applications X. Bellingham: SPIE, 2017 - (Bertolotti, M.; Haus, J.; Zheltikov, A.), Roč. 10228 (2017), s. 1-13, č. článku 102280E. Proceedings of SPIE, 10228. ISBN 978-1-5106-0957-0. ISSN 0277-786X.
[Nonlinear Optics and Applications Conference /7./. Prague (CZ), 24.04.2017-25.04.2017]
R&D Projects: GA MŠMT LO1602; GA MŠMT LM2015086; GA MŠMT EF15_003/0000445
EU Projects: European Commission(XE) 657424 - QuantumLaP
Grant - others:OP VVV - BIATRI(XE) CZ.02.1.01/0.0/0.0/15_003/0000445
Institutional support: RVO:68378271
Keywords : electron-hole plasmas * carrier dynamics * phase-explosion * semiconductors * surface * ablation * density * pulses * vaporization * reflectivity
OECD category: Optics (including laser optics and quantum optics)
Permanent Link: http://hdl.handle.net/11104/0276863
