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0479788 - FZÚ 2018 RIV RU eng J - Journal Article
Krivyakin, G.K. - Volodin, V.A. - Shklyaev, A.A. - Mortet, Vincent - More Chevalier, Joris - Ashcheulov, Petr - Remeš, Zdeněk - Stuchlíková, The-Ha - Stuchlík, Jiří
Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region.
Semiconductors. Roč. 51, č. 10 (2017), s. 1370-1376. ISSN 1063-7826. E-ISSN 1090-6479
R&D Projects: GA ČR GA13-31783S
Grant - others:AV ČR(CZ) KONNECT-007
Program: Bilaterální spolupráce
Institutional support: RVO:68378271
Keywords : PIN * a-Si:H * Ge
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 0.672, year: 2017
Permanent Link: http://hdl.handle.net/11104/0275723