0470883 - FZÚ 2017 RIV NL eng J - Journal Article
Kamada, K. - Shoji, Y. - Kochurikhin, V.V. - Okumura, S. - Yamamoto, S. - Nagura, A. - Yeom, J.Y. - Kurosawa, S. - Yokota, Y. - Ohashi, Y. - Nikl, Martin - Yoshikawa, A.Growth and scintillation properties of 3 in. diameter Ce doped Gd
3Ga
3Al
2O
12 scintillation single crystal.
Journal of Crystal Growth. Roč. 452, Oct (2016), s. 81-84. ISSN 0022-0248. E-ISSN 1873-5002.
[American Conference on Crystal Growth and Epitaxy /20./ (ACCGE) / 17th Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE) / 2nd 2D Electronic Materials Symposium. Big Sky, MT, 02.08.2015-07.08.2015]
R&D Projects: GA MŠMT(CZ) LH14266; GA ČR GJ15-18300Y
EU Projects: European Commission(XE) 644260 - INTELUM
Institutional support: RVO:68378271
Keywords : single crystal growth * oxides * scintillator materials * scintillators
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.751, year: 2016
Permanent Link: http://hdl.handle.net/11104/0268397