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0469569 - FZÚ 2017 RIV US eng C - Conference Paper (international conference)
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Hulicius, Eduard
GaAsSb/InAs QDs structures for advanced telecom lasers.
ASDAM 2016. Danvers: IEEE, 2016 - (Haščík, Š.; Dzuba, J.; Vanko, G.), s. 57-60. ISBN 978-150903083-5.
[International conference on advanced semiconductor devices and microsystems /11./. Smolenice (SK), 13.11.2016-16.11.2016]
R&D Projects: GA MŠMT LO1603
Institutional support: RVO:68378271
Keywords : InAs/GaAs quantum dots * MOVPE * strain reducing layer * long emission wavelength * telecom lasers
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0267401