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0466446 - FZÚ 2017 RIV US eng C - Conference Paper (international conference)
Babchenko, O. - Vanko, G. - Dzuba, J. - Ižák, Tibor - Vojs, M. - Lalinský, T. - Kromka, Alexander
Schottky contact metallization stability on AlGaN/GaN heterostructure during the diamond deposition process.
ASDAM 2016. Danvers: IEEE, 2016 - (Haščík, Š.; Dzuba, J.; Vanko, G.), s. 157-160. ISBN 978-150903083-5.
[International conference on advanced semiconductor devices and microsystems /11./. Smolenice (SK), 13.11.2016-16.11.2016]
R&D Projects: GA ČR(CZ) GP14-16549P
Grant - others:AV ČR(CZ) SAV-16-02
Program: Bilaterální spolupráce
Institutional support: RVO:68378271
Keywords : diamond * GaN * HEMT * transistor * metallization
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0264737