0456681 - ÚCHP 2016 RIV JP eng C - Conference Paper (international conference)
Galkin, N.G. - Galkin, K.N. - Chernev, I.M. - Fajgar, Radek - Stuchlíková, The-Ha - Stuchlík, Jiří - Remeš, ZdeněkFormation and Properties of p–i–n Diodes Based on Hydrogenated Amorphous Silicon with Embedded CrSi, MgSi and CaSi Nanocrystallites for Energy Conversion Applications.
JJAP Conference Proceedings, Volume 3. Tokyo: Japan Society of Applied Physics, 2015, s. 011104. ISBN 978-4-86348-491-7.
[International Conference and Summer School on Advanced Silicide Technology 2014. Tokyo (JP), 19.07.2014-21.07.2014]
R&D Projects: GA ČR(CZ) GA14-05053S; GA MŠMT(CZ) LD14011; GA MŠMT(CZ) LH12236
Institutional support: RVO:67985858 ; RVO:68378271
Keywords : hydrogenated amorphous silicon * chemical vapour deposition * nanoparticles
Subject RIV: CF - Physical ; Theoretical Chemistry; BM - Solid Matter Physics ; Magnetism (FZU-D)
https://journals.jsap.jp/jjapproceedings/online/3-011104
Permanent Link: http://hdl.handle.net/11104/0257170
