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  1. 1.
    0450412 - FZÚ 2016 RIV CH eng C - Conference Paper (international conference)
    Ižák, Tibor - Babchenko, Oleg - Jirásek, Vít - Vanko, G. - Vojs, M. - Kromka, Alexander
    Influence of diamond CVD growth conditions and interlayer material on diamond/GaN interface.
    Silicon Carbide and Related Materials 2014. Pfaffikon: Trans Tech Publications, 2015 - (Chaussende, D.; Ferro, G.), s. 982-985. Materials Science Forum, 821-823. ISBN 978-3-03835-478-9. ISSN 1662-9752.
    [Silicon Carbide and Related Materials (ECSCRM 2014). Grenoble (FR), 21.09.2014-25.09.2014]
    R&D Projects: GA ČR(CZ) GP14-16549P
    Institutional support: RVO:68378271
    Keywords : polycrystalline diamond film * GaN substrate * microwave CVD * passivation layer * Raman spectroscopy * SEM
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Permanent Link: http://hdl.handle.net/11104/0251698
     
     

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