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0448593 - FZÚ 2016 RIV NL eng J - Journal Article
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Krčil, Pavel - Hulicius, Eduard - Komninou, Ph. - Kioseoglou, J.
MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm.
Journal of Crystal Growth. Roč. 414, Mar (2015), 167-171. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR GA13-15286S; GA MŠMT(CZ) LM2011026
Institutional support: RVO:68378271
Keywords : long emission wavelength * photocurrent * InAs quantum dots * MOVPE * GaAsSb layer
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.462, year: 2015
Permanent Link: http://hdl.handle.net/11104/0250242