0439648 - FZÚ 2015 RIV US eng C - Conference Paper (international conference)
Pokorný, M. - Kozák, M. - Trojánek, F. - Pangrác, Jiří - Hospodková, AliceType-I InAs quantum dots covered by GaAsSb strain reducing layer.
Nanophotonic Materials XI. Bellingham: SPIE, 2014 - (Cabrini, S.; Lerondel, G.; Schwartzberg, A.; Mokari, T.), s. 916113. Proceedings of SPIE, 9161. ISBN 978-1-62841-188-1. ISSN 0277-786X.
[Conference on Nanophotonic Materials XI. San Diego, CA (US), 20.08.2014-21.08.2014]
Institutional support: RVO:68378271
Keywords : indium arsenide * quantum dots * gallium arsenide * luminescence * near infrared * telecommunications * upconversion
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0242871
