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0424992 - FZÚ 2014 AU eng C - Conference Paper (international conference)
Pham, T.T. - Stuchlíková, The-Ha - Ledinský, Martin - Hruška, Karel - Le, V.T.H. - Stuchlík, Jiří
Deposition of Si:H thin films on transparent and conductive ZnOat boundary parameters of PECVD if Sn as catalyst element is used.
ISPC - Proceedings International Symposium on Plasma Chemistry (ISPC 21). Cairn: IPCS International Plasma Chemistry Society, 2013. IPSC, 21. ISBN N.
[International Symposium on Plasma Chemistry (ISPC 21)/21./. Cairns Convention Centre (AU), 04.08.2013-09.08.2013]
R&D Projects: GA ČR GA203/09/1088; GA MŠMT LH12236
Grant - others:AVČR(CZ) M100101216; AVČR(CZ) M100101217
Institutional support: RVO:68378271
Keywords : Si:H thin film * ZnO * PECVD * catalytic effect * Si-NWs
Subject RIV: BM - Solid Matter Physics ; Magnetism
http://www.ispc-conference.org/ispcproc/ispc21/ID396.pdf
Permanent Link: http://hdl.handle.net/11104/0230960