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0367155 - FZÚ 2012 RIV PL eng C - Conference Paper (international conference)
Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Kuldová, Karla - Vyskočil, Jan - Hulicius, Eduard - Hazdra, P.
GaAsSb strain reducing layers for InAs/GaAs quantum dot long wavelength and high efficiency emission.
EWMOVPE XIV. Wroclaw: Printing house of Wroclaw University of Technology, 2011 - (Prazmowska, J.), s. 105-108. ISBN 978-83-7493-599-9.
[European Workshop on Metalorganic Vapor Phase Epitaxy /14./. Wrocław (PL), 05.06.2011-08.06.2011]
R&D Projects: GA ČR GAP102/10/1201; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : quantum dot * InAs * GaAs * GaAsSb strain reducing layer * photoluminescence
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0006666