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0346873 - ÚJF 2011 RIV DE eng J - Journal Article
Lavrentiev, Vasyl - Vacík, Jiří - Vorlíček, Vladimír - Voseček, Václav
Raman scattering in silicon disordered by gold ion implantation.
Physica Status Solidi B. Roč. 247, č. 8 (2010), s. 2022-2026. ISSN 0370-1972. E-ISSN 1521-3951.
[8th International Conference on Optics of Surfaces and Interfaces (OSI-VIII). Ischia, 07.09.2009-11.09.2009]
R&D Projects: GA AV ČR IAA200480702; GA AV ČR IAA400100701; GA AV ČR(CZ) KAN400480701; GA ČR GA106/09/1264
Institutional research plan: CEZ:AV0Z10480505; CEZ:AV0Z10100520
Keywords : ion implantation * Raman spectra * Rutherford backscattering spectroscopy
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.344, year: 2010
Permanent Link: http://hdl.handle.net/11104/0187786