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0342440 - FZÚ 2011 RIV NL eng J - Journal Article
Hospodková, Alice - Hulicius, Eduard - Pangrác, Jiří - Oswald, Jiří - Vyskočil, Jan - Kuldová, Karla - Šimeček, Tomislav - Hazdra, P. - Caha, O.
InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots.
Journal of Crystal Growth. Roč. 312, č. 8 (2010), 1383-1387. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA AV ČR IAA100100719; GA ČR GA202/09/0676; GA MŠMT LC510
Institutional research plan: CEZ:AV0Z10100521
Keywords : low dimensional structures * photoluminescence * low-pressure MOVPE * InAs/GaAs quantum dots * semiconducting III/V materials
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.737, year: 2010
Permanent Link: http://hdl.handle.net/11104/0185175