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0341444 - ÚFE 2010 RIV CH eng J - Journal Article
Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
LPE growth of InP layers from rare-earth treated melts for radiation detector structures.
Materials Science and Engineering B-Advanced Functional Solid-State Materials. Roč. 165, 1-2 (2009), s. 94-97. ISSN 0921-5107. E-ISSN 1873-4944
R&D Projects: GA ČR(CZ) GP102/08/P617; GA ČR GA102/06/0153
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor technology * rare earth elements * III-V semiconductors
Subject RIV: JJ - Other Materials
Impact factor: 1.715, year: 2009
Permanent Link: http://hdl.handle.net/11104/0184438