0331194 - FZÚ 2010 RIV NL eng J - Journal Article
Dubecký, F. - Zat'ko, B. - Hubík, Pavel - Gombia, E. - Boháček, P. - Huran, J. - Sekáčová, M.A new kind of quasi-ohmic metallization in semi-insulating GaAs: study of electrical characteristics.
[Nový typ kvaziohmické metalizace v semiizolačním GaAs.]
Nuclear Instruments & Methods in Physics Research Section A. Roč. 607, č. 1 (2009), 132-134. ISSN 0168-9002. E-ISSN 1872-9576.
[International Workshop on Radiation Imaging Detectors /10./. Helsinki, 29.06.2008-03.07.2008]
R&D Projects: GA AV ČR IAA1010404
Grant - others:SGAS(SK) 2/7170/27; APRD(SK) APVV-99-P06305; APRD(SK) APVV-0459-06
Institutional research plan: CEZ:AV0Z10100521
Keywords : GaAs * semi-insulating * metal-semiconductor contact * Schottky barrier * work function
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.317, year: 2009
Permanent Link: http://hdl.handle.net/11104/0176781
