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0088197 - ÚFE 2008 PL eng A - Abstract
Grym, Jan - Procházková, Olga - Lorinčík, Jan - Zavadil, Jiří - Žďánský, Karel
Characterization of Pr, Yb, and Ce doped InP layers by PL and SIMS.
[Charakterizace vrstev InP dopovaných Pr, Yb, a Ce metodami PL a SIMS.]
ICSSC-5 & PCCCG-8: Fifth International Conference on Solid State Crystals and Eight Polish Conference on Crystal Growth. Scientific Programme and Book Abstracts. Warszawa: Conference Engine, 2007. s. 17--. ISBN 83-89585-14-6.
[ICSSC /5./ & PCCCG /8./. 24.05.2007-25.05.2007, Zakopane]
R&D Projects: GA ČR GA102/06/0153
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor technology * rare earth compounds * III-V semiconductors
Subject RIV: JJ - Other Materials
Permanent Link: http://hdl.handle.net/11104/0149808