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0585191 - FZÚ 2025 RIV US eng J - Journal Article
Alam, Mahebub - Hubík, Pavel - Gedeonová, Zuzana - Fekete, Ladislav - Kopeček, Jaromír - Taylor, Andrew - Mortet, Vincent
Thick crack-free {113} epitaxial boron-doped diamond layers for power electronics—Deposition with nitrogen addition and high microwave power.
Applied Physics Letters. Roč. 124, April (2024), č. článku 161904. ISSN 0003-6951. E-ISSN 1077-3118
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR(CZ) GA20-11140S
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : diamond * boron doping * thick
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 4, year: 2022
Permanent Link: https://hdl.handle.net/11104/0353691