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0580611 - ÚFP 2024 RIV US eng J - Journal Article
Dinh, TH. - Medvedev, Nikita - Ishino, M. - Kitamura, T. - Hasegawa, N. - Otobe, T. - Higashiguchi, T. - Sakaue, K. - Washio, M. - Hatano, T. - Kon, A. - Kubota, Y. - Inubushi, Y. - Owada, S. - Shibuya, T. - Ziaja, B. - Nishikino, M.
Controlled strong excitation of silicon as a step towards processing materials at sub-nanometer precision.
COMMUNICATIONS PHYSICS. Roč. 2, č. 1 (2019), č. článku 150. ISSN 2399-3650. E-ISSN 2399-3650
R&D Projects: GA MŠMT LTT17015; GA MŠMT(CZ) LM2015083
Institutional support: RVO:61389021
Keywords : laser-ablation * femtosecond * thresholds * electrons * growth * beam
OECD category: Optics (including laser optics and quantum optics)
Impact factor: 4.684, year: 2019
Method of publishing: Open access
https://www.nature.com/articles/s42005-019-0253-2
Permanent Link: https://hdl.handle.net/11104/0349380