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0575229 - FZÚ 2024 RIV US eng J - Journal Article
Todt, C. - Telkamp, S. - Křížek, Filip - Reichl, C. - Gabureac, M. - Schott, R. - Cheah, E. - Zeng, P. - Weber, T. - Müller, A. - Vockenhuber, C. - Panah, M.B. - Wegscheider, W.
Development of Nb-GaAs based superconductor-semiconductor hybrid platform by combining in situ dc magnetron sputtering and molecular beam epitaxy.
Physical Review Materials. Roč. 7, č. 7 (2023), č. článku 076201. ISSN 2475-9953. E-ISSN 2475-9953
Institutional support: RVO:68378271
Keywords : Nb sputtering * ultra high vacuum sputtering * Nb-GaAs material system * superconductor semiconductor hybrids
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.4, year: 2022
Method of publishing: Limited access
https://doi.org/10.1103/PhysRevMaterials.7.076201
Permanent Link: https://hdl.handle.net/11104/0349118