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0575228 - FZÚ 2024 RIV US eng J - Journal Article
Cheah, E. - Haxell, D.Z. - Schott, R. - Zeng, P. - Paysen, E. - ten Kate, S.C. - Coraiola, M. - Landstetter, M. - Zadeh, A.B. - Trampert, A. - Sousa, M. - Riel, H. - Nichele, F. - Wegscheider, W. - Křížek, Filip
Control over epitaxy and the role of the InAs/Al interface in hybrid two-dimensional electron gas systems.
Physical Review Materials. Roč. 7, č. 7 (2023), č. článku 073403. ISSN 2475-9953. E-ISSN 2475-9953
R&D Projects: GA ČR(CZ) GM22-22000M
Institutional support: RVO:68378271
Keywords : InAs shallow quantum well * superconductor semiconductor interface * epitaxial Al * hybrid 2DEG
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.4, year: 2022
Method of publishing: Open access
Permanent Link: https://hdl.handle.net/11104/0348792